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Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics
- Source :
- AIP Advances, Vol 9, Iss 8, Pp 085226-085226-7 (2019)
- Publication Year :
- 2019
- Publisher :
- AIP Publishing LLC, 2019.
-
Abstract
- We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of the FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. The responsivity can reach about 104 A/W at operating voltages lower than 1.5 V. Furthermore, its light-to-dark (on/off) current ratio and temporal response characteristics are studied numerically. A maximum on/off ratio up to 193 can be obtained by optimizing the doping concentration of Ge gate.
Details
- Language :
- English
- ISSN :
- 21583226 and 65291506
- Volume :
- 9
- Issue :
- 8
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.652915069734bdd97d39ffe7d58bd65
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.5100039