Back to Search Start Over

Simple method for the growth of 4H silicon carbide on silicon substrate

Authors :
M. Asghar
M. Y. Shahid
F. Iqbal
K. Fatima
Muhammad Asif Nawaz
H. M. Arbi
R. Tsu
Source :
AIP Advances, Vol 6, Iss 3, Pp 035201-035201-6 (2016)
Publication Year :
2016
Publisher :
AIP Publishing LLC, 2016.

Abstract

In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
6
Issue :
3
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.634f6f6b152748c980c02a2c046b5181
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4943399