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Simple method for the growth of 4H silicon carbide on silicon substrate
- Source :
- AIP Advances, Vol 6, Iss 3, Pp 035201-035201-6 (2016)
- Publication Year :
- 2016
- Publisher :
- AIP Publishing LLC, 2016.
-
Abstract
- In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60 powder of high purity (99.99%) was evaporated from molybdenum boat. The as grown film was characterized by XRD, FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 6
- Issue :
- 3
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.634f6f6b152748c980c02a2c046b5181
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4943399