Modeling and PSPICE simulation of NBTI effects in VDMOS transistors

In this paper the results of modeling and simulation of NBTI effects in p-channel power VDMOS transistor have been presented. Based on the experimental results, the threshold voltage shifts and changes of transconductance during the NBT stress have been modeled and implemented in the PSPICE model of the IRF9520 transistor. By predefining the threshold voltage value before the NBT stress, and by assigning the stress time, transfer characteristics of the transistor are simulated. These characteristics are within (1.33÷11.25)% limits in respect to the measured ones, which represents a good agreement. [Projekat Ministarstva nauke Republike Srbije, br. OI 171026 i br. TR 32026]