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Analysis the scatter parameter of SOI RF switch with different design structure
- Source :
- Dianzi Jishu Yingyong, Vol 45, Iss 2, Pp 16-19 (2019)
- Publication Year :
- 2019
- Publisher :
- National Computer System Engineering Research Institute of China, 2019.
-
Abstract
- Based on commercial 0.2 μm SOI RF process platform, the influence of stack, width, bias resistance and bias voltage on scatter parameter characteristics of test structure for SOI RF switch application is investigated, including series branch, shunt branch, single-pole-single-throw, and single-pole-double-throw. The impacts of different design on RF switch insertion loss and isolation are discussed in detail. The result can be reference as device optimization and circuit design.
- Subjects :
- SOI
RF switch
scatter parameter
IL
isolation
Electronics
TK7800-8360
Subjects
Details
- Language :
- Chinese
- ISSN :
- 02587998
- Volume :
- 45
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- Dianzi Jishu Yingyong
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.5fa3b2713954d88b6345dd3f36ff270
- Document Type :
- article
- Full Text :
- https://doi.org/10.16157/j.issn.0258-7998.181774