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785-nm Frequency Comb-Based Time-of-Flight Detection for 3D Surface Profilometry of Silicon Devices
- Source :
- IEEE Photonics Journal, Vol 14, Iss 5, Pp 1-8 (2022)
- Publication Year :
- 2022
- Publisher :
- IEEE, 2022.
-
Abstract
- Three-dimensional integrated circuits (3D-ICs) are becoming more significant in portable devices, autonomous vehicles, and data centers. As the demand for highly integrated and high-performance semiconductor devices grows, recent 3D integration technologies focus on lowering the size of the micro-structures on such devices for high density. In order to inspect the 3D semiconductor devices, it is critical to measure the heights, depths, and overall surface profiles of the micro-structures made with silicon materials. Here, we demonstrate precise surface imaging for silicon devices by using a femtosecond mode-locked laser centered at 785 nm wavelength and an electro-optic sampling-based time-of-flight detection method with sub-10-nanometer axial precision. We could successfully measure the surface profiles as well as the step heights of silicon wafer stacks and micro-scale structures on silicon substrates.
Details
- Language :
- English
- ISSN :
- 19430655
- Volume :
- 14
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Photonics Journal
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.59a2b940f03149d5b261759d259e8116
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JPHOT.2022.3203988