Cite
Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector
MLA
Anupam Ghosh, et al. “Staggered Band Alignment of N-Er2O3/p-Si Heterostructure for the Fabrication of a High-Performance Broadband Photodetector.” Nano Express, vol. 5, no. 3, Jan. 2024, p. 035003. EBSCOhost, https://doi.org/10.1088/2632-959X/ad5d81.
APA
Anupam Ghosh, Riya Wadhwa, Shivani, Sonia Deswal, Pradeep Kumar, & Mukesh Kumar. (2024). Staggered band alignment of n-Er2O3/p-Si heterostructure for the fabrication of a high-performance broadband photodetector. Nano Express, 5(3), 035003. https://doi.org/10.1088/2632-959X/ad5d81
Chicago
Anupam Ghosh, Riya Wadhwa, Shivani, Sonia Deswal, Pradeep Kumar, and Mukesh Kumar. 2024. “Staggered Band Alignment of N-Er2O3/p-Si Heterostructure for the Fabrication of a High-Performance Broadband Photodetector.” Nano Express 5 (3): 035003. doi:10.1088/2632-959X/ad5d81.