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The investigation of self-heating effect on Si1-xGex FinFETs with different device structures, Ge concentration, and operated voltages
- Source :
- AIP Advances, Vol 7, Iss 5, Pp 055105-055105-5 (2017)
- Publication Year :
- 2017
- Publisher :
- AIP Publishing LLC, 2017.
-
Abstract
- The self-heating effect on Si1-xGex based FinFETs is analyzed and investigated with different device structures/dimensions, Ge concentration, and operated voltages. The module-level material properties of the thermal conductivities (k) in Si and Ge with different operated temperature (T), material thickness (t), and impurity concentration (N) are calibrated by the experimental thermo-electric measurement firstly in our simulation model. The maximum chip temperature in the Ge FinFETs is found to be ∼50 °C higher than in the Si FinFETs due to the poor intrinsic material property of k in Ge material. This seriously limits the development of the Ge FinFETs in the future scaled logic devices even Si1-xGex material (x>0.8) has the higher intrinsic carrier mobility than pure Si. One of the possible solutions to avoid this self-heating effect in Si1-xGex based FinFETs is to reduce the operated voltage (
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 7
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.58f7f464622042638c2276f07d51c61c
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4983401