Temperature impact on parameters of In0.3Ga0.7As PV cell under laser irradiation condition

The parameters of In0.3Ga0.7As PV cell applied in laser wireless power transmission (LWPT) system dependence on temperature was investigated at a temperature range of 5-90°C under 100mW/cm2 laser intensity with 1070nm wavelength. The pollination algorithm method was used to extract parameters, viz., photocurrent, series and shunt resistance, reverse saturation current, and ideality factor from the I-V curves at each temperature point. The results show that the short circuit current decrease exponentially with temperature increasing, which is obviously different from the condition with solar irradiation. As temperature increases, the conversion efficiency and the open circuit voltage decreases linearly at the rate of 0.095%/°C and 1.89mV/°C, respectively. In addition, the dependence of series and shunt resistance, ideality factor, and fill factor on temperature was also analyzed. This research gives us a new understanding of PV cells under laser irradiation condition, also provides a direction for manufacturing the cells used in LWPT system.