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Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
- Source :
- Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
- Publication Year :
- 2020
- Publisher :
- Nature Portfolio, 2020.
-
Abstract
- The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC domains.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 11
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.56c581fa05234c709cfe115631e4b2c2
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-019-14022-3