Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons

Thermal stability of clusters and point defects in n-Si grown by Czochralski technique (Cz) was studied after irradiation by thefluence ~ (2 ÷ 4) ⋅ 1013 no ⋅сm-2 of fast-pile neutrons. The effective concentration of carriers after series of isochronal and isothermal annealings of irradiated n-type silicon with n0 = (0.4 ÷ 1.2) ⋅ 1014 сm-3 before irradiation was described in the framework of the defect cluster corrected model. Stages of isochronal annealing process of defect clusters were determined with activation energies (Ea) and frequency factors (ν): Еа1 = 0.81 eV, ν1 = 5.4 ⋅ 106 s-1; Еа2 = 0.4 eV, ν2 = 1 s-1; Еа3 = 1.3 eV, ν3 = 6 ⋅ 104 s-1. Isothermal annealing at 353 K of defect clusters and interstitial atoms ISi (Ec – 0,315 еV) in the conducting matrix of silicon was described with Еа = 0.74 еV and ν = (1 ÷ 3.5) ⋅ 106 с -1.