Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices

MLA

Kai-Huang Chen, et al. “Study of the Characteristics of Ba0.6Sr0.4Ti1-XMnxO3-Film Resistance Random Access Memory Devices.” Micromachines, vol. 15, no. 9, Sept. 2024, p. 1143. EBSCOhost, https://doi.org/10.3390/mi15091143.

APA

Kai-Huang Chen, Chien-Min Cheng, Ming-Cheng Kao, Yun-Han Kao, & Shen-Feng Lin. (2024). Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices. Micromachines, 15(9), 1143. https://doi.org/10.3390/mi15091143

Chicago

Kai-Huang Chen, Chien-Min Cheng, Ming-Cheng Kao, Yun-Han Kao, and Shen-Feng Lin. 2024. “Study of the Characteristics of Ba0.6Sr0.4Ti1-XMnxO3-Film Resistance Random Access Memory Devices.” Micromachines 15 (9): 1143. doi:10.3390/mi15091143.