THE FORMATION OF DISCRETE ZONES ON THE BASIS OF THEIR ALUMINUM THERMOMIGRATION IN SILICON

The study identifies the main types of defects occurring in the formation of discrete zones on the basis of aluminium selective surface wetting of silicon wafers. The dependence of defect formation on the surface microrelief, and the thickness of the protective coating of silicon oxide, the process temperature, the velocity of the melt, the height of the melt and the concentration of additives of gallium to aluminum have been investigated. Statistical processing of a lot set of experimental data allowed to establish the optimal conditions of the process offormation zones and to reduce the total relative amount of all types of defects to values not exceeding 5 %.