Back to Search
Start Over
Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
- Source :
- Micromachines, Vol 14, Iss 2, p 291 (2023)
- Publication Year :
- 2023
- Publisher :
- MDPI AG, 2023.
-
Abstract
- In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 14
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.4a7fe78fe7748e080c7db3cc4a85856
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/mi14020291