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Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Authors :
Kathia Harrouche
Srisaran Venkatachalam
Lyes Ben-Hammou
François Grandpierron
Etienne Okada
Farid Medjdoub
Source :
Micromachines, Vol 14, Iss 2, p 291 (2023)
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current under a high electric field while using a moderate carbon concentration into the buffer. By carefully tuning the Al concentration into the back barrier layer, the optimized heterostructure offers a unique combination of electron confinement and low trapping effects up to high drain bias for a gate length as short as 100 nm. Consequently, pulsed (CW) Load-Pull measurements at 40 GHz revealed outstanding performances with a record power-added efficiency of 70% (66%) under high output power density at VDS = 20 V. These results demonstrate the interest of this approach for future millimeter-wave applications.

Details

Language :
English
ISSN :
2072666X
Volume :
14
Issue :
2
Database :
Directory of Open Access Journals
Journal :
Micromachines
Publication Type :
Academic Journal
Accession number :
edsdoj.4a7fe78fe7748e080c7db3cc4a85856
Document Type :
article
Full Text :
https://doi.org/10.3390/mi14020291