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A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K
- Source :
- Applied Sciences, Vol 12, Iss 8, p 3947 (2022)
- Publication Year :
- 2022
- Publisher :
- MDPI AG, 2022.
-
Abstract
- A CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 μm2 (R = 2 μm), a data rate of 45 Gbps, an insertion loss of −8 dB, a static extinction ratio of 22 dB, and an energy consumption of 4.5 pJ/bit when 2.5 V peak-to-peak voltage is applied. Moreover, it works well when temperature varies around 60 K. A method of tuning the resonant wavelength based on the carrier concentration is proposed here because the device is reliable when the linewidth varies within ±5%. CIPMRM provides a way to overcome the shortcomings of temperature and process sensitivity, which are characteristics of the photonic micro-ring modulator. It can be used in optoelectronic integration for its small size and stable performance.
Details
- Language :
- English
- ISSN :
- 20763417
- Volume :
- 12
- Issue :
- 8
- Database :
- Directory of Open Access Journals
- Journal :
- Applied Sciences
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.48912d3d4924ca798e7e1db11aeadc3
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/app12083947