Raman- and Infrared-Active Phonons in Nonlinear Semiconductor AgGaGeS4

AgGaGeS4 is an emerging material with promising nonlinear properties in the near- and mid-infrared spectral ranges. Here, the experimental phonon spectra of AgGaGeS4 single crystals synthesized by a modified Bridgman method are presented. The infrared absorption spectra are reported. They are obtained from the fitting of reflectivity to a model dielectric function comprising a series of harmonic phonon oscillators. In the Raman spectra, several modes are registered, which were not detected in previous works. The analysis of the experimental vibrational bands is performed on the basis of a comparison with reported data on structurally related binary, ternary, and quaternary metal chalcogenides. The temperature dependence of the Raman spectra between room temperature and 15 K is also investigated.