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Electron-irradiation induced unconventional phase transition of β-Ga2O3 epitaxial single-crystal thin film observed by in-situ TEM
- Source :
- Journal of Materials Research and Technology, Vol 30, Iss , Pp 2397-2405 (2024)
- Publication Year :
- 2024
- Publisher :
- Elsevier, 2024.
-
Abstract
- In this work, the phase transition process of β-Ga2O3 thin films under heating and (or) electron irradiation condition was investigated by in-situ transmission electron microscopy. It is found that only under the high temperature, β-Ga2O3 did not undergo phase transition even when the temperature was up to 1000 °C. When under electron irradiation condition, the unconventional phase transition from β-Ga2O3 to δ-Ga2O3 occurred with a slow rate. When electron irradiation was coupled with a thermal field, the initial temperature of phase transition decreased, and the speed of phase transition also greatly accelerated. The new phase maintains crystallography relationship with the β-Ga2O3 parent phase as following: [010]β//[011‾]δ, (200)β//(2‾11)δ, and (402‾)β//(411)δ. The results reveal that electron irradiation can trigger the phase transition process from β-Ga2O3 to δ-Ga2O3, and the high temperature obviously accelerates the rate of phase transition process.
Details
- Language :
- English
- ISSN :
- 22387854
- Volume :
- 30
- Issue :
- 2397-2405
- Database :
- Directory of Open Access Journals
- Journal :
- Journal of Materials Research and Technology
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.3f6093bcde5849bcbdcaa21adfd2650e
- Document Type :
- article
- Full Text :
- https://doi.org/10.1016/j.jmrt.2024.03.138