Back to Search
Start Over
Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors
- Source :
- AIP Advances, Vol 10, Iss 2, Pp 025131-025131-5 (2020)
- Publication Year :
- 2020
- Publisher :
- AIP Publishing LLC, 2020.
-
Abstract
- Solution-processed carbon nanotubes (CNTs) have recently attracted significant attention as p-type thin-film transistor (TFT) channels due to their high carrier mobility, high uniformity, and low process temperature. However, implementing sophisticated macroelectronics with a combination of single CNT-TFTs has been challenging because it is difficult to fabricate n-type CNT-TFTs. Therefore, in combination with indium-gallium-zinc-oxide (IGZO), which has excellent electrical performance and has been commercialized as an n-type oxide TFT, we demonstrated various hybrid complementary metal-oxide semiconductor integrated circuits, such as inverters and nor and nand gates. This hybrid integration approach allows us to combine the strength of p-type CNT- and n-type IGZO-TFTs, thus offering a significant improvement for macroelectronic applications.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 10
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.3df93c39fad54e438377cbfd1cc5ed98
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.5139085