Back to Search Start Over

Hybrid integration of carbon nanotube and amorphous IGZO thin-film transistors

Authors :
Yongwoo Lee
Jinsu Yoon
Jun Tae Jang
Bongsik Choi
Hyo-Jin Kim
Geon-Hwi Park
Dong Myong Kim
Dae Hwan Kim
Min-Ho Kang
Sung-Jin Choi
Source :
AIP Advances, Vol 10, Iss 2, Pp 025131-025131-5 (2020)
Publication Year :
2020
Publisher :
AIP Publishing LLC, 2020.

Abstract

Solution-processed carbon nanotubes (CNTs) have recently attracted significant attention as p-type thin-film transistor (TFT) channels due to their high carrier mobility, high uniformity, and low process temperature. However, implementing sophisticated macroelectronics with a combination of single CNT-TFTs has been challenging because it is difficult to fabricate n-type CNT-TFTs. Therefore, in combination with indium-gallium-zinc-oxide (IGZO), which has excellent electrical performance and has been commercialized as an n-type oxide TFT, we demonstrated various hybrid complementary metal-oxide semiconductor integrated circuits, such as inverters and nor and nand gates. This hybrid integration approach allows us to combine the strength of p-type CNT- and n-type IGZO-TFTs, thus offering a significant improvement for macroelectronic applications.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
10
Issue :
2
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.3df93c39fad54e438377cbfd1cc5ed98
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5139085