Analysis of Plasmon Loss Peaks of Oxides and Semiconductors with the Energy Loss Function

This paper highlights the use and applications of the energy loss function (ELF) for materials analysis by using electron energy loss spectroscopy (EELS). The basic Drude–Lindhart theory of the ELF is briefly presented along with reference to reflection electron energy loss (REELS) data for several dielectric materials such as insulating high-k binary oxides and semiconductors. Those data and their use are critically discussed. A comparison is made to the available ab initio calculations of the ELF for these materials. Experimental, high-resolution TEM-EELS data on Si, SiC, and CeO2 obtained using a high-resolution, double-Cs-corrected transmission electron microscope are confronted to calculated spectra on the basis of the ELF theory. Values of plasmon energies of these three dielectric materials are quantitatively analyzed on the basis of the simple Drude’s free electron theory. The effects of heavy ion irradiation on the TEM-EELS spectra of Si and SiC are addressed. In particular, the downward shifts of plasmon peaks induced by radiation damage and the subsequent amorphization of Si and SiC are discussed. TEM-EELS data of CeO2 are also analyzed with respect to the ELF data and with comparison to isostructural ZrO2 and PuO2 by using the same background and with reference to ab initio calculations.