Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

MLA

Lun-Chun Chen, et al. “Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method.” IEEE Journal of the Electron Devices Society, vol. 7, Jan. 2019, pp. 168–73. EBSCOhost, https://doi.org/10.1109/JEDS.2018.2886446.

APA

Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, & Yung-Chun Wu. (2019). Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method. IEEE Journal of the Electron Devices Society, 7, 168–173. https://doi.org/10.1109/JEDS.2018.2886446

Chicago

Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, and Yung-Chun Wu. 2019. “Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method.” IEEE Journal of the Electron Devices Society 7 (January): 168–73. doi:10.1109/JEDS.2018.2886446.