Simulation of electron transfer processes in a semiconductor structure using graphene and boron nitride

This paper presents the results of simulating the electron transfer processes in a three-dimensional semiconductor structure containing graphene and layers of boron hexagonal nitride using the Monte – Carlo method. Graphene is currently considered one of the most promising materials for the creation of new semiconductor devices with good performance for high frequency ranges. The use of graphene, which has high mobility of charge carriers, high thermal conductivity and a number of other positive properties, allows the development of new semiconductor devices with good output characteristics. The simulation allowed us to obtain the main characteristics of electron transfer, namely, dependence of speed, average energy, mobility on the strength of the electric field in a semiconductor structure containing a layer of graphene and boron nitride region. Electron transfer processes were simulated considering temperature variations of graphene and boron nitride layers, which is observed with increasing strength of the electric field in the structure. The analysis of the obtained dependencies showed that at small values of electric field strength, which does not exceed approximately 2.5 kV/cm, there is a nonlinear change in electron energy and temperature. At more significant values of electric field strength a quasi-linear change in temperature is observed. The similar course of dependence is observed also for the dependences of the average energy of electrons on the intensity of the electric field for the graphene layer.. The resulting dependencies of electron transfer characteristics can serve the basis for determining output characteristics in multi-layer semiconductor devices containing layers of graphene, boron hexagonal nitride and other materials.