Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure

MLA

Su Jin Kim, et al. “Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure.” Nanomaterials, vol. 14, no. 16, Aug. 2024, p. 1324. EBSCOhost, https://doi.org/10.3390/nano14161324.

APA

Su Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, & Chang Goo Kang. (2024). Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure. Nanomaterials, 14(16), 1324. https://doi.org/10.3390/nano14161324

Chicago

Su Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, and Chang Goo Kang. 2024. “Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS2 Field-Effect Transistors with Buried Local Back-Gate Structure.” Nanomaterials 14 (16): 1324. doi:10.3390/nano14161324.