Ultrasound influence on the electrical activity of radiation defects in γ-irradiated n-type silicon crystals

The effect of the ultrasonic (US) processing in regime (fUS = 8 МГц, WUS = 2 Вт/см2 , t ≈ 104 с) on the transformation of radiation defects (RDs) in γ-irradiated (D = 108 and 109 rad) in Chochralski-grown n-type silicon single crystals (9,5 · 1017 см-3) has been studied. The changes of the temperature dependence (100–300 К) of concentration n(T) and mobility µ(T) of charge carriers after γ-irradiated (irreversible changes) and US processing (reverse) has been exposed. Energy positions of the defect levels Eа i and their concentrations Na i from the theoretical computations were determined. Possibility of aсoustostimulated transformation of definite RDs (divacancies V2 - , Ea 1 = (Ес - 0.424 еВ), modified Аcenter (V - O), Ea 2 = (Ес - 0.205 еВ) and complex that can contain nitrogen (? + N), Ea 3 = (Ес - 0,19 еВ)) by means of change of configuration, structure and recharge for example two-dimensional energy configuration-coordinate model is considered.