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High-efficiency deflection of high energy protons due to channeling along the 〈110〉 axis of a bent silicon crystal

Authors :
W. Scandale
G. Arduini
M. Butcher
F. Cerutti
M. Garattini
S. Gilardoni
A. Lechner
A. Masi
D. Mirarchi
S. Montesano
S. Redaelli
R. Rossi
G. Smirnov
D. Breton
L. Burmistrov
V. Chaumat
S. Dubos
J. Maalmi
V. Puill
A. Stocchi
E. Bagli
L. Bandiera
G. Germogli
V. Guidi
A. Mazzolari
S. Dabagov
F. Murtas
F. Addesa
G. Cavoto
F. Iacoangeli
F. Galluccio
A.G. Afonin
Yu.A. Chesnokov
A.A. Durum
V.A. Maisheev
Yu.E. Sandomirskiy
A.A. Yanovich
A.D. Kovalenko
A.M. Taratin
A.S. Denisov
Yu.A. Gavrikov
Yu.M. Ivanov
L.P. Lapina
L.G. Malyarenko
V.V. Skorobogatov
T. James
G. Hall
M. Pesaresi
M. Raymond
Source :
Physics Letters B, Vol 760, Iss C, Pp 826-831 (2016)
Publication Year :
2016
Publisher :
Elsevier, 2016.

Abstract

A deflection efficiency of about 61% was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10% of its amorphous level whereas in channeling along the (110) planes it is about 25%. High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

Details

Language :
English
ISSN :
03702693 and 18732445
Volume :
760
Issue :
C
Database :
Directory of Open Access Journals
Journal :
Physics Letters B
Publication Type :
Academic Journal
Accession number :
edsdoj.33ebc92d697243fe900cbfbeedb0d50d
Document Type :
article
Full Text :
https://doi.org/10.1016/j.physletb.2016.07.072