Local density of states in a one-dimensional photonic crystal with a semiconducting cavity

In this paper, we calculate the local density of states using dyadic Green’s functions for a defective one-dimensional photonic crystal of finite size composed of alternating air and semiconductor layers. Herein, spatial periodicity is broken as one of the semiconductor layers increases its layers. In this study, we consider that the refractive index of semiconductor materials, such as GaAs, Si, and SiO2, changes with the amount of the applied pressure. We determined the existence of a confined mode within the cavity with a maximum value of the local density of states. The results show that, as pressure increases, the local density of states decreases within the confined mode. However, for the GaAs cavity, the results reveal that increased pressure favors the appearance of a larger number of confined modes at frequencies within the second photonic band gaps.