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Polarized Raman spectra of β-FeSi2 epitaxial film grown by molecular beam epitaxy

Authors :
Yoshikazu Terai
Haruki Yamaguchi
Hiroaki Tsukamoto
Naoki Murakoso
Hirofumi Hoshida
Source :
AIP Advances, Vol 8, Iss 10, Pp 105028-105028-9 (2018)
Publication Year :
2018
Publisher :
AIP Publishing LLC, 2018.

Abstract

Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy were measured to identify the Raman mode of the observed Raman active lines. Twelve of the observed 18 Raman lines showed a clear dependence of the Raman intensity on the crystal rotation angle. By factor group analysis using the orthorhombic symmetry D2h18 of β-FeSi2, five Raman lines (193, 200, 249, 401, 494 cm-1) and seven lines (175, 277, 284, 298, 327, 410, 442 cm-1) were completely assigned to the Ag and B3g modes, respectively. The depolarization ratio of Raman scattering intensities was obtained from polarized Raman spectra measured in two polarization configurations. The values of the depolarization ratio also support the assignment of the Ag and B3g modes in β-FeSi2.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
8
Issue :
10
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.32a256c710b490cbc09902ab46a4b4a
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5042801