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Using a compositionally step graded hole reservoir layer with hole accelerating ability for reducing efficiency droop in GaN-based LEDs

Authors :
Daqian Ye
Dongyan Zhang
Chaoyu Wu
Duxiang Wang
Chenke Xu
Jie Zhang
Meichun Huang
Source :
AIP Advances, Vol 7, Iss 5, Pp 055016-055016-6 (2017)
Publication Year :
2017
Publisher :
AIP Publishing LLC, 2017.

Abstract

We presented a compositionally graded hole reservoir layers(HRL) - an AlGaN/GaN super lattice hole reservoir layer with Al mole fraction multi-step gradient from high to low (GSL-HRL) in this paper. The designed LED with compositionally step graded HRL shows comparable low operating voltage and less efficiency droop. Simulation results reveal that this graded HRL could reserve the hole effectively and the hole in HRL can be energized by the strong electric field due to the polarization caused by different Al contents AlxGa1-xN layers. Such a design makes hole travel across the p-type EBL and inject into the MQWs more efficiently and smoothly. The novel structure of HRL improves the performance of the LED significantly and gives a promising application in high power GaN-based LED in the future.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
7
Issue :
5
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.2f840d05422f4696857d1bd6734ec64c
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4984029