A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection

To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR, the proposed DTSCR has an enhanced current discharge capability that is achieved by creating a slave SCR path in parallel with the master SCR path. Moreover, the improved triggering and holding characteristic can be obtained by the proposed EDP-DTSCR. By sharing the anode emitter junction, a slave SCR path is constructed that is symmetrical to the position of the master SCR path to add an additional ESD discharge path to the EDP-DTSCR. In this way, the current discharge capability of the entire device is obviously improved. The TCAD simulation result shows that the proposed device has a remarkably lower on-resistance compared with the traditional DTSCR and the DTSCR with p-type guard ring (PGR-DTSCR). In addition, it is structurally optimized to further increase the holding voltage and reduce the trigger voltage to improve the anti-latching capability of the device, which is more conducive to the ESD protection window application of 28 nm CMOS technology.