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Voltage control of magnetism in Fe3-x GeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures
- Source :
- Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
- Publication Year :
- 2023
- Publisher :
- Nature Portfolio, 2023.
-
Abstract
- Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-x GeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-x GeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-x GeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-x GeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-x GeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 14
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.2dd6f42996c94562b27f0b226838c453
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-023-41382-8