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Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001) with tunable Fermi levels

Authors :
Hua Guo
Chen-Hui Yan
Jun-Wei Liu
Zhen-Yu Wang
Rui Wu
Zhi-Dong Zhang
Li-Li Wang
Ke He
Xu-Cun Ma
Shuai-Hua Ji
Wen-Hui Duan
Xi Chen
Qi-Kun Xue
Source :
APL Materials, Vol 2, Iss 5, Pp 056106-056106-6 (2014)
Publication Year :
2014
Publisher :
AIP Publishing LLC, 2014.

Abstract

In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO3(001). Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.

Details

Language :
English
ISSN :
2166532X
Volume :
2
Issue :
5
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.2cd29d24488942a390fdfefd5aa9be61
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4876637