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Topological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001) with tunable Fermi levels
- Source :
- APL Materials, Vol 2, Iss 5, Pp 056106-056106-6 (2014)
- Publication Year :
- 2014
- Publisher :
- AIP Publishing LLC, 2014.
-
Abstract
- In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO3(001). Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films.
- Subjects :
- Biotechnology
TP248.13-248.65
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 2166532X
- Volume :
- 2
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- APL Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.2cd29d24488942a390fdfefd5aa9be61
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4876637