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Reentrance of interface superconductivity in a high-T c cuprate heterostructure

Authors :
J. Y. Shen
C. Y. Shi
Z. M. Pan
L. L. Ju
M. D. Dong
G. F. Chen
Y. C. Zhang
J. K. Yuan
C. J. Wu
Y. W. Xie
J. Wu
Source :
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Publication Year :
2023
Publisher :
Nature Portfolio, 2023.

Abstract

Abstract Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La2-x Sr x CuO4 (0.45 ≤ x ≤ 1.0) and discover an unprecedented reentrance of interface superconductivity in La2-x Sr x CuO4 /La2CuO4 heterostructures. As x increases, the superconductivity is weakened and completely fades away at x = 0.8; but it revives at higher doping and fully recovers at x = 1.0. This is shown to be correlated with the suppression of the interfacial charge transfer around x = 0.8 and the weak-to-strong localization crossover in the La2-x Sr x CuO4 layer. We further construct a theoretical model to account for the sophisticated relation between charge localization and interfacial charge transfer. Our work advances both the search for and control of new superconducting heterostructures.

Subjects

Subjects :
Science

Details

Language :
English
ISSN :
20411723
Volume :
14
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
edsdoj.26af15209d3343aeae3311cf5c2bf746
Document Type :
article
Full Text :
https://doi.org/10.1038/s41467-023-42903-1