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Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

Authors :
Mostafa Rahimi Azghadi
Ying-Chen Chen
Jason K. Eshraghian
Jia Chen
Chih-Yang Lin
Amirali Amirsoleimani
Adnan Mehonic
Anthony J. Kenyon
Burt Fowler
Jack C. Lee
Yao-Feng Chang
Source :
Advanced Intelligent Systems, Vol 2, Iss 5, Pp n/a-n/a (2020)
Publication Year :
2020
Publisher :
Wiley, 2020.

Abstract

The ever‐increasing processing power demands of digital computers cannot continue to be fulfilled indefinitely unless there is a paradigm shift in computing. Neuromorphic computing, which takes inspiration from the highly parallel, low‐power, high‐speed, and noise‐tolerant computing capabilities of the brain, may provide such a shift. Many researchers from across academia and industry have been studying materials, devices, circuits, and systems, to implement some of the functions of networks of neurons and synapses to develop neuromorphic computing platforms. These platforms are being designed using various hardware technologies, including the well‐established complementary metal‐oxide semiconductor (CMOS), and emerging memristive technologies such as SiOx‐based memristors. Herein, recent progress in CMOS, SiOx‐based memristive, and mixed CMOS‐memristive hardware for neuromorphic systems is highlighted. New and published results from various devices are provided that are developed to replicate selected functions of neurons, synapses, and simple spiking networks. It is shown that the CMOS and memristive devices are assembled in different neuromorphic learning platforms to perform simple cognitive tasks such as classification of spike rate‐based patterns or handwritten digits. Herein, it is envisioned that what is demonstrated is useful to the unconventional computing research community by providing insights into advances in neuromorphic hardware technologies.

Details

Language :
English
ISSN :
26404567 and 20190018
Volume :
2
Issue :
5
Database :
Directory of Open Access Journals
Journal :
Advanced Intelligent Systems
Publication Type :
Academic Journal
Accession number :
edsdoj.205ef7b996874345886cf99c4dd1ebfd
Document Type :
article
Full Text :
https://doi.org/10.1002/aisy.201900189