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A Modified Wet Transfer Method for Eliminating Interfacial Impurities in Graphene

Authors :
Dong Jin Jang
Mohd Musaib Haidari
Jin Hong Kim
Jin-Yong Ko
Yoonsik Yi
Jin Sik Choi
Source :
Nanomaterials, Vol 13, Iss 9, p 1494 (2023)
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

Graphene has immense potential as a material for electronic devices owing to its unique electrical properties. However, large-area graphene produced by chemical vapor deposition (CVD) must be transferred from the as-grown copper substrate to an arbitrary substrate for device fabrication. The conventional wet transfer technique, which uses FeCl3 as a Cu etchant, leaves microscale impurities from the substrate, and the etchant adheres to graphene, thereby degrading its electrical performance. To address this limitation, this study introduces a modified transfer process that utilizes a temporary UV-treated SiO2 substrate to adsorb impurities from graphene before transferring it onto the final substrate. Optical microscopy and Raman mapping confirmed the adhesion of impurities to the temporary substrate, leading to a clean graphene/substrate interface. The retransferred graphene shows a reduction in electron–hole asymmetry and sheet resistance compared to conventionally transferred graphene, as confirmed by the transmission line model (TLM) and Hall effect measurements (HEMs). These results indicate that only the substrate effects remain in action in the retransferred graphene, and most of the effects of the impurities are eliminated. Overall, the modified transfer process is a promising method for obtaining high-quality graphene suitable for industrial-scale utilization in electronic devices.

Details

Language :
English
ISSN :
20794991
Volume :
13
Issue :
9
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.1e8775a599054b8f903cd37f5c043e26
Document Type :
article
Full Text :
https://doi.org/10.3390/nano13091494