Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

MLA

Chuanzhe Ma, et al. “Design and Performance of Ultraviolet 368-Nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement.” Frontiers in Materials, vol. 9, Feb. 2022. EBSCOhost, https://doi.org/10.3389/fmats.2022.836714.

APA

Chuanzhe Ma, Xinchang Wang, Yuqin Lao, Jiachen Yang, Guojie Chen, Gang Wang, & Bingfeng Fan. (2022). Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement. Frontiers in Materials, 9. https://doi.org/10.3389/fmats.2022.836714

Chicago

Chuanzhe Ma, Xinchang Wang, Yuqin Lao, Jiachen Yang, Guojie Chen, Gang Wang, and Bingfeng Fan. 2022. “Design and Performance of Ultraviolet 368-Nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement.” Frontiers in Materials 9 (February). doi:10.3389/fmats.2022.836714.