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Field performance evaluation of various crystalline silicon photovoltaic technologies in Pingshan, China

Authors :
Cao Yu
Jing Chai
Shuwei Han
Zi Liu
Xiaobo Li
Jianxi Yao
Source :
Energy Reports, Vol 5, Iss , Pp 525-528 (2019)
Publication Year :
2019
Publisher :
Elsevier, 2019.

Abstract

The field performance of three different crystalline silicon photovoltaic (PV) module technologies in Pingshan, China (BSk climate based on the Köppen–Geiger climate classification) is analyzed and compared, including p-type multicrytalline silicon (multi-Si), p-type monocrystalline silicon (mono-Si) and n-type mono-Si modules. Both p-type multi-Si and mono-Si solar cells are of the conventional type with back-surface field, whereas the n-type device is of the heterojunction (HET) type. From January 2017 to December 2018, the n-type HET modules showed the best field performance (in terms of kWh/kWp) with an average daily energy yield of 3.9 kWh/kWp. The p-type multi-Si and mono-Si modules performed similarly with an average daily energy yield of 3.7 kWh/kWp (marginally better for multi-Si modules). On-site measurements also showed that the location has a ‘blue-rich’ and ‘red-rich’ spectrum in the summer and winter, respectively. In general, the spectral effect is positive in the summer, and negative in the winter, for all three investigated c-Si PV technologies. Besides, the spectral effect slightly favors the HET technology in the summer, but the opposite is true for mono-Si and multi-Si devices in the winter. Keywords: Photovoltaics, Crystalline silicon, Field performance, Spectral mismatch, Energy yield

Details

Language :
English
ISSN :
23524847
Volume :
5
Issue :
525-528
Database :
Directory of Open Access Journals
Journal :
Energy Reports
Publication Type :
Academic Journal
Accession number :
edsdoj.1c30a50921064e97b023adb5981564e0
Document Type :
article
Full Text :
https://doi.org/10.1016/j.egyr.2019.04.006