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Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current

Structure Design of UVA VCSEL for High Wall Plug Efficiency and Low Threshold Current

Authors :
Bing An
Yukun Wang
Yachao Wang
Zhijie Zou
Yang Mei
Hao Long
Zhiwei Zheng
Baoping Zhang
Source :
Photonics, Vol 11, Iss 11, p 1012 (2024)
Publication Year :
2024
Publisher :
MDPI AG, 2024.

Abstract

Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier layers affect the emission efficiency of UVA VCSELs greatly, suggesting an optimal thicknesses of 2.2 nm for the well layer and 2.7 nm for the barrier layer. Additionally, an overall consideration of threshold current, series resistance, photoelectric conversion efficiency, and optical output power results in the optimized thickness of the ITO current spreading layer, ~20 nm. Furthermore, by employing a five-pair Al0.15Ga0.85N/GaN multi-quantum barrier electron blocking layer (EBL) instead of a single Al0.2Ga0.8N EBL, the device shows a ~51% enhancement in the optical output power and a ~48% reduction in the threshold current. The number of distributed Bragg reflector (DBR) pairs also plays crucial roles in the device’s photoelectric performance. The device designed in this study demonstrates a minimum lasing threshold of 1.16 mA and achieves a maximum wall plug efficiency of approximately 5%, outperforming other similar studies.

Details

Language :
English
ISSN :
23046732
Volume :
11
Issue :
11
Database :
Directory of Open Access Journals
Journal :
Photonics
Publication Type :
Academic Journal
Accession number :
edsdoj.165791e92b524cabb5e4c43b0d1aab03
Document Type :
article
Full Text :
https://doi.org/10.3390/photonics11111012