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Macroporous Semiconductors

Authors :
Helmut Föll
Malte Leisner
Ala Cojocaru
Jürgen Carstensen
Source :
Materials, Vol 3, Iss 5, Pp 3006-3076 (2010)
Publication Year :
2010
Publisher :
MDPI AG, 2010.

Abstract

Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.

Details

Language :
English
ISSN :
19961944
Volume :
3
Issue :
5
Database :
Directory of Open Access Journals
Journal :
Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.14e7de019a94d1ea897914c15ec88b4
Document Type :
article
Full Text :
https://doi.org/10.3390/ma3053006