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Macroporous Semiconductors
- Source :
- Materials, Vol 3, Iss 5, Pp 3006-3076 (2010)
- Publication Year :
- 2010
- Publisher :
- MDPI AG, 2010.
-
Abstract
- Pores in single crystalline semiconductors come in many forms (e.g., pore sizes from 2 nm to > 10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties directly or as nanocompounds if the pores are filled. The various kinds of pores obtained in semiconductors like Ge, Si, III-V, and II-VI compound semiconductors are systematically reviewed, emphasizing macropores. Essentials of pore formation mechanisms will be discussed, focusing on differences and some open questions but in particular on common properties. Possible applications of porous semiconductors, including for example high explosives, high efficiency electrodes for Li ion batteries, drug delivery systems, solar cells, thermoelectric elements and many novel electronic, optical or sensor devices, will be introduced and discussed.
- Subjects :
- porous semiconductors
macropores in semiconductors
electrochemistry of semiconductors
in situ impedance spectroscopy
applications of porous semiconductors
modeling of pore formation
Technology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 3
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.14e7de019a94d1ea897914c15ec88b4
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/ma3053006