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Extrinsic voltage control of effective carrier lifetime in polycrystalline PbSe mid-wave IR photodetectors for increased detectivity

Authors :
Samiran Ganguly
Xin Tang
Sung-Shik Yoo
Philippe Guyot-Sionnest
Avik W. Ghosh
Source :
AIP Advances, Vol 10, Iss 9, Pp 095117-095117-6 (2020)
Publication Year :
2020
Publisher :
AIP Publishing LLC, 2020.

Abstract

Polycrystalline PbSe for mid-wave infrared (IR) photodetectors is an attractive material option due to its high operating/ambient temperature operation and relatively easy and cheap fabrication process, making it a candidate for low-power, small footprint, uncooled/passively cooled photodetectors. However, there are many material challenges that reduce the specific detectivity (D*) of these detectors. In this work, we demonstrate that it is possible to improve upon this metric by externally modulating the effective lifetime of conducting carriers by application of a back-gate voltage that can control the recombination rate of carriers in the detector by increasing the passivation of PbSe. We build a back-gated PbSe detector, in which we experimentally observe unambiguous signature of effective carrier modulation with a back-gate voltage for different temperatures. We develop a quantitative model for the detector that captures and closely benchmarks this modulation, which is then used to project the increase in D* in better optimized detector designs. This approach when combined with other techniques, such as plasmonic enhancement of light absorption, can lead to substantive enhancement of performance in PbSe mid-wave IR detectors widening their application space.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
10
Issue :
9
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.1448932fb86b4423bf9cf334f38631ad
Document Type :
article
Full Text :
https://doi.org/10.1063/5.0019342