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Excitonic Evolution in WS2/MoS2 van der Waals Heterostructures Turned by Out-of-Plane Localized Pressure

Authors :
Weihu Kong
Zeqian Ren
Peng Chen
Jinxiang Cui
Yili Chen
Jizhou Wu
Yuqing Li
Wenliang Liu
Peng Li
Yongming Fu
Jie Ma
Source :
Applied Sciences, Vol 14, Iss 5, p 2179 (2024)
Publication Year :
2024
Publisher :
MDPI AG, 2024.

Abstract

In this study, we explore the exciton dynamics in a WS2/MoS2 van der Waals (vdW) heterostructure under varying pressures by integrating a laser-confocal photoluminescence (PL) spectroscope and an atomic force microscope (AFM). For the WS2/MoS2 heterostructure, the exciton emission belonging to MoS2 is too weak to be distinguished from the PL spectra. However, upon contact with a Si probe, the emission intensity of WS2 excitons significantly decreases from 34,234 to 6560, thereby matching the intensity level of MoS2. This alteration substantially facilitates the exploration of interlayer excitonic properties within the heterostructures using PL spectroscopy. Furthermore, the Si probe can apply out-of-plane localized pressure to the heterostructure. With increasing pressure, the emission intensity of the WS2 trions decreases at a rate twice that of other excitons, and the exciton energy increases at a rate of 0.1 meV nN−1. These results elucidate that the WS2 trions are particularly sensitive to the out-of-plane pressure within a WS2/MoS2 vdW heterostructure.

Details

Language :
English
ISSN :
20763417
Volume :
14
Issue :
5
Database :
Directory of Open Access Journals
Journal :
Applied Sciences
Publication Type :
Academic Journal
Accession number :
edsdoj.12d061d639144ca9cb69129b1ec593c
Document Type :
article
Full Text :
https://doi.org/10.3390/app14052179