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Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations

Authors :
Makoto Miyoshi
Taiki Nakabayashi
Kosuke Yamamoto
Pradip Dalapati
Takashi Egawa
Source :
AIP Advances, Vol 11, Iss 9, Pp 095208-095208-8 (2021)
Publication Year :
2021
Publisher :
AIP Publishing LLC, 2021.

Abstract

GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT) systems as well as solar cells. This paper reports the research results of Ga0.9In0.1N multiple-quantum-well (MQW) PV cells on sapphire, focusing primarily on the growth temperature managements in metalorganic chemical vapor deposition (MOCVD) processes. As a result of the MOCVD study, the epilayer qualities in the PV cell structures improved significantly through the adoption of an optimized growth temperature for the GaInN MQWs and the two-step growth for the top p-GaN layers. Furthermore, the improved epilayer qualities resulted in the decrease in carrier recombination currents and series resistance for the forward diode characteristics without a light illumination. Subsequently, a sample with the improved qualities exhibited a higher open-circuit voltage and a higher fill factor in the PV characteristics. Eventually, the highest power conversion efficiency (PCE) in this study was measured to be 1.6% at a 1-sun solar spectrum and 42.7% at a monochromatic light illumination with 389 nm in wavelength and 5 mW cm−2 in optical power density. The dependency of the PV performance on the optical power densities at a monochromatic light illumination predicted that a higher PCE value may be achievable at a higher optical-power-density illumination. This is a very promising prediction when considering the practical application to OWPT systems.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
11
Issue :
9
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.114df26ac8f748819efd7496db2ae514
Document Type :
article
Full Text :
https://doi.org/10.1063/5.0062346