The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications

MLA

Qian Yu, et al. “The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications.” Micromachines, vol. 16, no. 1, Dec. 2024, p. 1. EBSCOhost, https://doi.org/10.3390/mi16010001.

APA

Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, Wenze Gao, Mei Wu, Bin Hou, Gang Qiu, Xiaoning He, Xiaohua Ma, & Yue Hao. (2024). The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications. Micromachines, 16(1), 1. https://doi.org/10.3390/mi16010001

Chicago

Qian Yu, Sheng Wu, Meng Zhang, Ling Yang, Xu Zou, Hao Lu, Chunzhou Shi, et al. 2024. “The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications.” Micromachines 16 (1): 1. doi:10.3390/mi16010001.