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Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling

Authors :
Li Zhang
Shengjie Tang
Cheng Chen
Haibin Lv
Xiaoping Liu
Source :
IEEE Photonics Journal, Vol 16, Iss 2, Pp 1-5 (2024)
Publication Year :
2024
Publisher :
IEEE, 2024.

Abstract

An on-chip, high-extinction-ratio transverse electric (TE) pass polarizer utilizing a silicon oxynitride (SiON) slab has been proposed and experimentally verified. The power confinement ratio of the mode field is manipulated by using a SiON slab, where most of the power of the transverse magnetic (TM) mode is transferred to the upper SiON slab and then attenuated through radiation, while the TE mode passes through with relatively low propagation loss. Experimental results show that our proposed device can achieve an extinction ratio that varies from 20.5 to 32.7 dB in the wavelength range of 790 to 870 nm, with an insertion loss of 0.6 to 1.7 dB. Potentially, this design has lower material refractive index contrast, larger minimum etching size, smaller lengths, and less stray light crosstalk, which is beneficial for systems applications such as gyroscopes.

Details

Language :
English
ISSN :
19430655
Volume :
16
Issue :
2
Database :
Directory of Open Access Journals
Journal :
IEEE Photonics Journal
Publication Type :
Academic Journal
Accession number :
edsdoj.10543b3e984c4abebe46dd449fd02c98
Document Type :
article
Full Text :
https://doi.org/10.1109/JPHOT.2024.3377707