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Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition
- Source :
- Nanomaterials, Vol 12, Iss 17, p 3033 (2022)
- Publication Year :
- 2022
- Publisher :
- MDPI AG, 2022.
-
Abstract
- The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.
- Subjects :
- graphene
hot filament chemical vapor deposition
methane gas
Chemistry
QD1-999
Subjects
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 12
- Issue :
- 17
- Database :
- Directory of Open Access Journals
- Journal :
- Nanomaterials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.0acce425b86d4930a23272c49d1b086c
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/nano12173033