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Nonvolatile ferroelectric domain wall memory integrated on silicon
- Source :
- Nature Communications, Vol 13, Iss 1, Pp 1-9 (2022)
- Publication Year :
- 2022
- Publisher :
- Nature Portfolio, 2022.
-
Abstract
- Integrating ferroelectric perovskite oxides on Si is highly desired for electronic applications but challenging. Here, the authors show emergent in-plane ferroelectricity and promising nonvolatile memories based on resistive domain wall in BaTiO3/Si.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 13
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.093a024a1a2d4583ab5fca0c033bc47e
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-022-31763-w