Polar iodate BiO(IO3): A two-dimensional ultrawide-bandgap semiconductor with high carrier mobility and robust piezoelectricity

MLA

Meiyang Yu, et al. “Polar Iodate BiO(IO3): A Two-Dimensional Ultrawide-Bandgap Semiconductor with High Carrier Mobility and Robust Piezoelectricity.” Results in Physics, vol. 59, no. 107561-, Apr. 2024. EBSCOhost, https://doi.org/10.1016/j.rinp.2024.107561.

APA

Meiyang Yu, Wenjiang Gao, Xiaobo Shi, Qingqing Yuan, Bing Wang, Lin Ju, & Huabing Yin. (2024). Polar iodate BiO(IO3): A two-dimensional ultrawide-bandgap semiconductor with high carrier mobility and robust piezoelectricity. Results in Physics, 59(107561-). https://doi.org/10.1016/j.rinp.2024.107561

Chicago

Meiyang Yu, Wenjiang Gao, Xiaobo Shi, Qingqing Yuan, Bing Wang, Lin Ju, and Huabing Yin. 2024. “Polar Iodate BiO(IO3): A Two-Dimensional Ultrawide-Bandgap Semiconductor with High Carrier Mobility and Robust Piezoelectricity.” Results in Physics 59 (107561-). doi:10.1016/j.rinp.2024.107561.