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Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Authors :
Weihuang Yang
Jinchai Li
Wei Lin
Shuping Li
Hangyang Chen
Dayi Liu
Xu Yang
Junyong Kang
Source :
AIP Advances, Vol 3, Iss 5, Pp 052103-052103 (2013)
Publication Year :
2013
Publisher :
AIP Publishing LLC, 2013.

Abstract

Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
3
Issue :
5
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.074d53ca20f04255859670edda9708a3
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4804247