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Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs
- Source :
- AIP Advances, Vol 3, Iss 5, Pp 052103-052103 (2013)
- Publication Year :
- 2013
- Publisher :
- AIP Publishing LLC, 2013.
-
Abstract
- Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 3
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.074d53ca20f04255859670edda9708a3
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4804247