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Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of AlzGa1−zAs (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows

Authors :
Viktor Shamakhov
Sergey Slipchenko
Dmitriy Nikolaev
Ilya Soshnikov
Alexander Smirnov
Ilya Eliseyev
Artyom Grishin
Matvei Kondratov
Artem Rizaev
Nikita Pikhtin
Peter Kop’ev
Source :
Technologies, Vol 11, Iss 4, p 89 (2023)
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

AlzGa1−zAs layers of various compositions were grown using metalorganic chemical vapor deposition on a GaAs substrate with a pattern of alternating SiO2 mask/window stripes, each 100 µm wide. Microphotoluminescence maps and thickness profiles of AlzGa1−zAs layers that demonstrated the distribution of the growth rate and z in the window were experimentally studied. It was shown that the layer growth rate and the AlAs mole fraction increased continuously from the center to the edge of the window. It was experimentally shown that for a fixed growth time of 10 min, as z increased from 0 to 0.3, the layer thickness difference between the center of the window and the edge increased from 700 Å to 1100 Å, and the maximum change in z between the center of the window and the edge reached Δz 0.016, respectively. Within the framework of the vapor -phase diffusion model, simulations of the spatial distribution of the layer thickness and z across the window were carried out. It was shown that the simulation results were in good agreement with the experimental results for the effective diffusion length D/k: Ga—85 µm, Al—50 µm.

Details

Language :
English
ISSN :
22277080
Volume :
11
Issue :
4
Database :
Directory of Open Access Journals
Journal :
Technologies
Publication Type :
Academic Journal
Accession number :
edsdoj.07162cfb80394cee9167b8acaec9e1e7
Document Type :
article
Full Text :
https://doi.org/10.3390/technologies11040089