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Plasmon assisted synthesis of TiN-supported single-atom nickel catalysts

Authors :
Keeniya-Gamalage-Gehan Chaturanga De Silva
Naomi Helsel
Hirithya Sharad Jeyashangararaj
Pabitra Choudhury
Sanchari Chowdhury
Source :
Discover Nano, Vol 19, Iss 1, Pp 1-13 (2024)
Publication Year :
2024
Publisher :
Springer, 2024.

Abstract

Abstract We report the deposition of single atom nickel catalyst on refractory plasmonic titanium nitride (TiN) nanomaterials supports using the wet synthesis method under visible light irradiation. TiN nanoparticles efficiently absorb visible light to generate photoexcited electrons and holes. Photoexcited electrons reduce nickel precursor to deposit Ni atoms on TiN nanoparticles’ surface. The generated hot holes are scavenged by the methanol. We studied the Ni deposition on TiN nanoparticles by varying light intensity, light exposure time, and metal precursor concentration. These studies confirmed the photodeposition method is driven by hot electrons and helped us to find optimum synthesis conditions for single atoms deposition. We characterized the nanocatalysts using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). We used density functional theory (DFT) calculations to predict favorable deposition sites and aggregation energy of Ni atoms on TiN. Surface defect sites of TiN are most favorable for single nickel atoms depositions. Interestingly, the oxygen sites on native surface oxide layer of TiN also exhibit strong binding with the single Ni atoms. Plasmon enhanced synthesis method can facilitate photodeposition of single atom catalysts on a wide class of metallic supports with plasmonic properties.

Details

Language :
English
ISSN :
27319229
Volume :
19
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Discover Nano
Publication Type :
Academic Journal
Accession number :
edsdoj.05e7aaf3147e406386a9def16aee8a23
Document Type :
article
Full Text :
https://doi.org/10.1186/s11671-024-03992-z