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Real space characterization of nonlinear hall effect in confined directions

Authors :
Sheng Luo
Chuang-Han Hsu
Guoqing Chang
Arun Bansil
Hsin Lin
Gengchiau Liang
Source :
npj Computational Materials, Vol 10, Iss 1, Pp 1-7 (2024)
Publication Year :
2024
Publisher :
Nature Portfolio, 2024.

Abstract

Abstract The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterizations of NLHE evaluated through quantum transport in TaIrTe4 nanoribbon without the explicit Berry curvature dipole (BCD) information. We first characterize the NLHE in both transverse confined directions in global-level measurement. The impact of quantum confinement in NLHE is evaluated by adjusting the width of nanoribbons. Then, the probing area is trimmed to the atomic scale to evaluate the local texture, where we discover its patterns differ among the probed neighboring atomic groups. The analysis of charge distribution reveals the connections between NLHE’s local patterns and its non-centrosymmetric nature, rendering nearly an order of Hall voltage enhancement through probe positioning. Our work paves the way to expand the range of NLHE study and unveil its physics in more versatile material systems.

Details

Language :
English
ISSN :
20573960
Volume :
10
Issue :
1
Database :
Directory of Open Access Journals
Journal :
npj Computational Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.03c287a2e0945ba964f3db00af039c9
Document Type :
article
Full Text :
https://doi.org/10.1038/s41524-024-01201-0