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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes

Authors :
P. Chen
D. G. Zhao
D. S. Jiang
J. J. Zhu
Z. S. Liu
J. Yang
X. Li
L. C. Le
X. G. He
W. Liu
X. J. Li
F. Liang
B. S. Zhang
H. Yang
Y. T. Zhang
G. T. Du
Source :
AIP Advances, Vol 6, Iss 3, Pp 035124-035124-9 (2016)
Publication Year :
2016
Publisher :
AIP Publishing LLC, 2016.

Abstract

In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
6
Issue :
3
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.032baa8387e64e7ca84723235cdc3c46
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4945015