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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes
- Source :
- AIP Advances, Vol 6, Iss 3, Pp 035124-035124-9 (2016)
- Publication Year :
- 2016
- Publisher :
- AIP Publishing LLC, 2016.
-
Abstract
- In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 6
- Issue :
- 3
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.032baa8387e64e7ca84723235cdc3c46
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4945015