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Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
- Source :
- Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-1 (2017)
- Publication Year :
- 2017
- Publisher :
- SpringerOpen, 2017.
- Subjects :
- Materials of engineering and construction. Mechanics of materials
TA401-492
Subjects
Details
- Language :
- English
- ISSN :
- 19317573 and 1556276X
- Volume :
- 12
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nanoscale Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.01baa7ac8ade44c2a6a02f9bd0c5c946
- Document Type :
- article
- Full Text :
- https://doi.org/10.1186/s11671-017-2227-1